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| SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG05UBUL2 Single Line TVS Diode for ESD Protection in Portable Electronics FEATURES Transient protection for data lines to IEC 61000-4-2(ESD) : 20kV(air/contact) IEC 61000-4-4(EFT) : 2.5kV/50A IEC 61000-4-5(Surge) 3A(tp=8/20 s) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. (* Multi-Layer Varistors [0402 Size]) Protects on I/O or power line. Low clamping voltage. Low leakage current. E H D E G B 1 2 2 A 1 C DIM MILLIMETERS _ A 1.0 + 0.05 _ B 0.6 + 0.05 0.39 +0.01 C - 0.03 _ D 0.5 + 0.05 _ 0.05 0.25 + E _ G 0.65 + 0.05 1. Anode 2. Cathode APPLICATIONS USB 2.0, 10/100/1000 Ethernet, FireWire, DVI, HDMI, S-ATA Mobile Communication Consumer Products (STB, MP3, DVD, DSC...) LCD-Display, Camera Notebooks and desktop computers, peripherals ULP-2(1) Marking CATHODE MARK MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Range Storage Temperature ) SYMBOL PPK IPP TOP Tstg RATING 63 3 -55 125 -55 150 UNIT W 2 T 2 1 1 A ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance ) TEST CONDITION It=1mA VRWM=5.3V IPP=1A, tp=8/20 s IPP=3A, tp=8/20 s CJ VR=0V, f=1MHz MIN. 5.3 7 TYP. 11 14 0.27 MAX. 5.3 100 V 21 0.4 pF UNIT V V A SYMBOL VRWM VBR IR VC 2010. 6. 7 Revision No : 2 1/3 PG05UBUL2 CLAMPING VOLTAGE CLAMPING VOLTAGE VC (V) REVERSE CURRENT REVERSE CURRENT IR (A) 10 10 10 10 10 10 4 -7 17 16 15 14 13 12 11 10 9 8 7 0 1 2 -8 +125 -9 +85 -10 -11 +25 tP=8/20 3 -12 0 1 2 3 4 5 6.5 PEAK PULSE CURRENT IPP () AMBIENT TEMPERATURE Ta ( ) CAPACITANCE 0.4 0.25 LINE CAPACITANCE CAPACITANCE Cj (pF) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 4 CAPACITANCE Cj (pF) 0.24 0.23 VR=0V 0.22 0.21 0.2 0.19 0 VR=3.3V VR=5.3V f=1 MHZ 5 6 500 1000 1500 2000 2500 3000 REVERSE VOLTAGE VR (V) FREQUENCY f ( ) LINE CAPACITANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 -50 CAPACITANCE Cj (pF) VR=5.3V VR=3.3V VR=0V f=1MHz -25 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta ( ) 2010. 6. 7 Revision No : 2 2/3 PG05UBUL2 C 2 2 A 1 B 1 DIM MILLIMETERS _ A 1.0 + 0.05 _ B 0.6 + 0.05 0.39 +0.01 C - 0.03 _ + 0.05 D 0.5 _ 0.25 +0.05 E _ G 0.65 + 0.05 E G E H D 1. Anode 2. Cathode ULP-2(1) 2010. 6. 7 Revision No : 2 3/3 |
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